Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

Abstract

In this work, we experimentally investigate the impact of electrical stress on the tunability of single hole transport properties within a p-type silicon MOSFET at a temperature of T = 2 K. This is achieved by monitoring Coulomb-blockade from three disorder based quantum dots at the channel-oxide interface, which are known to lack tunability as a result of their stochastic origin. Our findings indicate that when applying gate biases between −4 V and −4.6 V, nearby charge trapping enhances Coulomb-blockade leading to a stronger quantum dot confinement that can be reversed to the initial device condition after performing a thermal cycle reset. Re-applying stress then gives rise to a predictable response from reproducible changes in the quantum dot charging characteristics with consistent charging energy increases of up to ≈50% being observed. We reach a threshold above gate biases of −4.6 V, where the performance and stability become reduced due to device degradation occurring as a product of large-scale trap generation. The results not only suggest stress as an effective technique to enhance and reset charging properties but also offer insight on how standard industrial silicon devices can be harnessed for single charge transport applications.

DOI： 10.1088/1361-6463/ac3da9

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Other Link： https://iopscience.iop.org/article/10.1088/1361-6463/ac3da9/pdf

Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

Abstract

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel coupling t_c of 57 μeV and a short spin−orbit length l_SO of 250 nm. The demonstrated strong spin−orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.

DOI： 10.1088/1361-6528/abef91

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Other Link： https://iopscience.iop.org/article/10.1088/1361-6528/abef91/pdf

Publishing type：Research paper (scientific journal)   Publisher：AIP Publishing  

DOI： 10.1063/5.0023647

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Publishing type：Research paper (scientific journal)   Publisher：American Physical Society (APS)  

DOI： 10.1103/physreva.99.053845

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Other Link： http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevA.99.053845/fulltext

Publishing type：Research paper (scientific journal)   Publisher：AIP Publishing  

DOI： 10.1063/1.4913477

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Patent/Registration no：特許5856083 

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Patent/Registration no：特許5883974 

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Patent/Registration no：特許5421230 

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Patent/Registration no：特許(米国) US9065243 B2 

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Author：Other 

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